Novel Tunnel Magnetoresistive Sensor Functionalities via Oblique-Incidence Deposition

Controlling the magnetic properties of ultrathin films remains one main challenges to further development tunnel magnetoresistive (TMR) device applications. The response in such devices is mainly governed by extending primary TMR trilayer with use suitable contact materials. transfer anisotropy ferromagnetic electrodes consisting CoFeB layers results a field-dependent response, which determined as well We flexibly apply oblique-incidence deposition (OID) introduce arbitrary intrinsic in-plane profiles into layers. OID-induced shapes and eliminates requirement additional Functional control achieved via an adjustable shape that selectively tailored for This approach circumvents previous limitations on allows design new sensing functionalities, can be precisely customized specific application, even high field regime. resulting sensors maintain typical signal strength superb thermal stability junction, revealing striking advantage functional using anisotropic interfacial roughness.